Interest in the use of photo electrochemical solar cells for
low cost energy conversion has led to an extensive research in the search for
novel and suitable thin film semiconductor materials. The techniques presently
used for synthesis of mixed metal chalcogenide
and oxide thin films are CBD, MOCVD, spin coating, electro deposition,
spray pyrolysis, sputtering, crystal growth, and chemical bath deposition.
All these deposition techniques require specific
sophisticated instrumentation. In this regard APT is more attractive and
relatively inexpensive presently used by us for deposition of mixed metal
chalcogenide and oxide thin thin films.
In the present investigation we attempt to prepare mixed
metal chalcogenide and oxide thin films by arrested precipitation technique.
The purpose of work is to establish and optimize the growth condition to
produce these thin films.
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