Interest
in the use of photo electrochemical solar cells for low cost energy conversion
has led to an extensive research in the search for novel and suitable thin film
semiconductor materials. The techniques presently used for synthesis of mixed
metal chalcogenide
and oxide thin films are CBD, MOCVD, spin coating, electro deposition,
spray pyrolysis, sputtering, crystal growth, and chemical bath deposition.
All
these deposition techniques require specific sophisticated instrumentation. In
this regard APT is more attractive and relatively inexpensive presently used by
us for deposition of mixed metal chalcogenide and oxide thin thin films.
In
the present investigation we attempt to prepare mixed metal chalcogenide and
oxide thin films by arrested precipitation technique. The purpose of work is to
establish and optimize the growth condition to produce these thin films.
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